The response in question has a lot of ah, uh's, and stutters:
"Relative to phase change, which has been in the market place before and which micron itself has some experience with in the past again this is a very different architecture in terms of the place it fills in the memory hierarchy because it has these dramatic improvements in speed and volatility and performance"
They didn't say that it wasn't PCM, and they didn't say that the technology was different. They said that the architecture was different than the PCM that Micron produced before. Which would be the cross-point organization and the all important selector element. They mention that the cell works my a "property change of the material", or a "bulk material property change".
Go look up Micron's recent patents and applications. This is PCM.
I do find it very interesting that they are bending over backwards not to call out the memory technology and specifically answering a question directly regarding if it is actually PCM.
The video presentation mentioned "resistive". I'm not a memory nerd. Does that fact from their disclosure help at all narrow what this type of memory can be best categorized as?
There is an entire family of memory elements who's resistance is modified in order to store data. RRAM/ReRAM, CBRAM, PCM, MRAM, as well as many others.
